| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| LY61L2568AML-10 LY61L2568AML-10I LY61L2568AML-10IT |
256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L25616AML-10I LY61L25616AML-10T LY61L25616AML- |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L25616GL-10LL LY61L25616GL-12LLET LY61L25616GL |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY61L2568 LY61L2568LL LY61L2568ML LY61L2568MV LY61 |
256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY612568 LY612568E LY612568I LY612568ML LY612568MV |
5V 256K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| AT27BV256-90TI AT27BV256 AT27BV256-12JC AT27BV256- |
High Speed CMOS Logic Dual 4-Stage Binary Counters 14-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
High Speed CMOS Logic Dual Decade Ripple Counters 16-SOIC -55 to 125
High Speed CMOS Logic Dual 4-Input NOR Gates 14-PDIP -55 to 125
256K 32K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| BL-R313G BL-R513G BL-BX113G BL-BX113C BL-BX139 BL- |
BIGGER SIZE LED LAMPS (ROUND TYPES) 较大尺寸的LED节能灯（圆形类型
MBL /-5V/200MV RED
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125
High Speed CMOS Logic Phase-Locked Loop with VCO and Lock Detector 16-PDIP -55 to 125
High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SOIC -55 to 125
High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125
High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-PDIP -55 to 125
|
?╁??′唤??????
Yellow Stone, Corp.
早安股份有限公司
|
| HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
